Reaction of Implanted N Isotope with SiO2 Near Si3N4-Film and SiO2-Substrate Interface
نویسندگان
چکیده
منابع مشابه
Selective SiO2-to-Si3N4 etching in inductively coupled fluorocarbon plasmas: Angular dependence of SiO2 and Si3N4 etching rates
In the fabrication of microstructures in SiO2 , etch selectivity of SiO2 to masking, etch stop, and underlayer materials need to be maintained at corners and inclined surfaces. The angular dependence of the SiO2-to-Si3N4 etch selectivity mechanism in a high density fluorocarbon plasma has been studied using V-groove structures. The SiO2 etch rate on 54.7° inclined surfaces is lower than on flat...
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ژورنال
عنوان ژورنال: Journal of Nuclear Science and Technology
سال: 2006
ISSN: 0022-3131
DOI: 10.3327/jnst.43.382